2007. 6. 8 1/2 semiconductor technical data kta1270 epitaxial planar pnp transistor revision no : 1 general purpose application. switching application. features excellent h fe linearity : h fe (2)=25(min.) at v ce =-6v, i c =-400ma. complementary to ktc3202. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.30 m 1.00 n 1. emitter 2. collector 3. base + _ +0.10 - 0.05 electrical characteristics (ta=25 ) note : h fe (1) classification 0:70 140, y:120 240 h fe (2) classification 0:25min., y:40min. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-35v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (1) (note) v ce =-1v, i c =-100ma 70 - 240 h fe (2) (note) v ce =-6v, i c =-400ma 25 - - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.25 v base-emitter voltage v be v ce =-1v, i c =-100ma - -0.8 -1.0 v transition frequency f t v ce =-6v, i c =-20ma - 200 - mhz collector output capacitance c ob v cb =-6v, i e =0, f=1mhz - 13 - pf characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -500 ma base current i e 500 ma collector power dissipation p c 625 mw junction temperature t j 150 storage temperature range t stg -55 150
2007. 6. 8 2/2 kta1270 revision no : 1 i c - v ce collector-emitter voltage v ce (v) 0-1-2 -100 0 collector current i c (ma) collector current i c (ma) i b - v be base-emitter voltage v be (v) collector-emitter voltage v ce (v) 0 -0.2 -0.3 base current i b ( a) 10 dc current gain h fe 1k -0.3 collector current i c (ma) h fe - i c -0.01 -0.5 collector current i c (ma) v ce(sat) - i c -3 -4 -5 -200 -300 -400 -500 -600 common emitter ta=25 c i =-1ma b -2 -3 -4 -5 -6 -7 -8 collector-emitter saturation voltage v ce(sat) (v) -1 -3 -10 -30 -100 -300 -1k -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c -1 -0.1 safe operating area -1 -10 -100 -10 -100 -1000 -10000 -1 -3 -10 -30 -100 -300 -1 k 30 50 100 300 500 common emitter ta=100 c ta=25 c ta=-25 c v =-1v ce ce v =-6v -0.4 -0.6 -0.8 -1.0 -1.2 -30 -1 -3 -10 -100 -300 -1k -3k common emitter v =-6v ce ta=1 00 c ta=25 c ta= -25 c 0 *single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature 100ms* 10ms* 1ms* i c max(pulse)* i c max(continuous) dc dperation(ta=25 c)
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